AM2305P these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.043 @ v gs = -4.5v -4.5 0.054 @ v gs = -2.5v -4.0 0.120 @ v gs = -1.8v -2.7 product summary -20 ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g symbol maximum units t <= 5 sec 100 steady-state 150 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja symbol ratings units v ds -20 v gs 8 t a =25 o c -4.5 t a =70 o c -3.6 i dm -10 t a =25 o c 1.25 t a =70 o c 0.8 t j , t stg -55 to 150 o c absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -10 a v gs = -4.5 v, i d = -3.6 a 43 v gs = -2.5 v, i d = -3.1 a 54 v gs = -1.8 v, i d = -2.7 a 120 forward tranconductance a g fs v ds = -5 v, i d = -1.25 a 12 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.60 v total gate charge q g 12.0 gate-source charge q gs 2.0 gate-drain charge q gd 2.0 turn-on delay time t d(on) 6.5 rise time t r 20 turn-off delay time t d(off) 31 fall-time t f 21 specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -5 v, v gs = -4.5 v, i d = -2.4 a nc drain-source on-resistance a r ds(on) m ? parameter limits unit AM2305P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
